Interlayered dielectric planarization with TEOS-CVD and SOG

Author

Kawai, Masato ; Matsuda, Kenzo ; Miki, Kazumi ; Sakiyama, Keizo

Author_Institution

Sharp Corp., Inc., Nara, Japan

fYear

1988

fDate

13-14 June 1988

Firstpage

419

Lastpage

425

Abstract

Spin-on-glass (SOG) and TEOS-CVD based methods were examined in connection with the planarization of the intermediate dielectric between lower and upper aluminum connections. TEOS-based PECVD and thermal CVD processes are examined as a combination which has the ability to fully planarize the narrow ( approximately 0.1- mu m) spaces between fine first aluminum lines. The combination of TEOS CVD with SOG results in almost complete planarization, extending from the wider spaces down to submicrometer space.<>

Keywords

chemical vapour deposition; dielectric thin films; integrated circuit technology; metallisation; organic compounds; Al connections; PECVD; SOG; TEOS-CVD; interlayered dielectric planarisation; tetraethylorthosilicate; thermal CVD; Aluminum; Design automation; Dielectrics; Metallization; Planarization; Plasma temperature; Resists; Sputter etching; Testing; Topology;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Multilevel Interconnection Conference, 1988. Proceedings., Fifth International IEEE

Conference_Location

Santa Clara, CA, USA

Type

conf

DOI

10.1109/VMIC.1988.14221

Filename

14221

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3056061