DocumentCode :
3056230
Title :
Mapping grain orientation of high mobility thienothiophene copolymer thin films by transmission electron microscopy and image analysis
Author :
Zhang, Xinran ; Hudson, Steven D. ; DeLongchamp, Dean M. ; Gundlach, David J.
Author_Institution :
Polymers Div., Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
fYear :
2009
fDate :
9-11 Dec. 2009
Firstpage :
1
Lastpage :
1
Abstract :
In this work, poly(2,5-Bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene (pBTTT), a state-of-the-art solution-processable semiconducting polymer with field-effect hole mobility as high as 0.1-1 cm2/V s, was used for grain mapping. The large, terraced crystals of pBTTT that form in spin-cast thin films after heating to a mesophase on a hydrophobic substrate extend laterally for microns and vertically throughout the film thickness, making it a suitable material for imaging compared with other semiconducting polymers. By using dark-field (DF) transmission electron microscopy (TEM), we found that the characteristic terraced structure of a pBTTT with tetradecyl side chains (pBTTT-C14) is made up of micron- or submicron-sized crystalline grains which contain even smaller nanocrystals.
Keywords :
crystal orientation; hole mobility; polymer blends; substrates; thin films; transmission electron microscopy; crystalline grains; field effect hole mobility; grain mapping; grain orientation; high mobility thienothiophene copolymer; hydrophobic substrate; image analysis; pBTTT; poly(2,5-Bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene; semiconducting polymers; thin films; transmission electron microscopy; Electron mobility; Heating; Image analysis; Polymer films; Semiconductivity; Semiconductor films; Semiconductor thin films; Substrates; Transistors; Transmission electron microscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
Type :
conf
DOI :
10.1109/ISDRS.2009.5378117
Filename :
5378117
Link To Document :
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