• DocumentCode
    3056296
  • Title

    Resonant cavity-enhanced quantum-dot infrared photodetectors with guided-mode resonance reflector

  • Author

    Chi-Cheng Wang ; Sheng-Di Lin

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2013
  • fDate
    June 30 2013-July 4 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We propose a resonant cavity-enhanced quantum-dot infrared photodetectors with a top mirror of Ge/SiO2 sub-wavelength grating. With a total thickness of ~7.7 μm, the simulated maximum absorption is ~60-70% at 8 μm with an enhancement factor of ~6-20.
  • Keywords
    III-V semiconductors; elemental semiconductors; germanium; indium compounds; infrared detectors; mirrors; optical elements; photodetectors; quantum dots; silicon compounds; Ge-SiO2; InAs; enhancement factor; guided-mode resonance reflector; resonant cavity-enhanced quantum-dot infrared photodetectors; sub-wavelength grating; top mirror; wavelength 8 mum; Absorption; Cavity resonators; Electric fields; Gallium arsenide; Photodetectors; Quantum dots; Reflectivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
  • Conference_Location
    Kyoto
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2013.6600096
  • Filename
    6600096