Semiconductor non-linear absorption coefficients measured by optical pump with THz probe

Author

Tiedje, H.F. ; Haugen, H.K. ; Preston, J.S.

Author_Institution

Brockhouse Inst. for Mater. Res., McMaster Univ., Hamilton, Ont., Canada

fYear

2004

fDate

Sept. 27 2004-Oct. 1 2004

Firstpage

363

Abstract

Summary form only given. An optical pump, THz probe method is used to determine nonlinear absorption coefficients at 800 nm and 1300 nm for the semiconductors GaAs, InP, ZnSe and ZnTe. Using InP as an example, first linearly absorbed 800 nm pump light is used to determine the THz extinction cross-section per electron-hole pair. This cross-section is used to compute the free carrier density vs. 1300 nm fluence from the THz transmittance data for photon 1300 nm pump. The two photon absorption coefficient for InP at 1300 nm can then be calculated.

Keywords

II-VI semiconductors; III-V semiconductors; absorption coefficients; carrier density; electron-hole recombination; gallium arsenide; indium compounds; optical pumping; submillimetre wave generation; two-photon processes; zinc compounds; 1300 nm; 800 nm; GaAs; InP; THz extinction cross-section; THz probe method; THz transmittance data; ZnSe; ZnTe; electron-hole pair; free carrier density; optical pump light; semiconductor nonlinear absorption coefficients; two photon absorption coefficient; Absorption; Free electron lasers; Indium phosphide; Laser excitation; Nonlinear optics; Optical pulses; Optical pumping; Pulse amplifiers; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on

Conference_Location

Karlsruhe, Germany

Print_ISBN

0-7803-8490-3

Type

conf

DOI

10.1109/ICIMW.2004.1422109

Filename

1422109