Continuous-wave terahertz photomixing in low-temperature InGaAs

Author

Baker, C. ; Gregory, I.S. ; Tribe, W.R. ; Evans, M.J. ; Missous, M. ; Linfield, E.H.

Author_Institution

TeraView Ltd., Cambridge, UK

fYear

2004

fDate

27 Sept.-1 Oct. 2004

Firstpage

367

Lastpage

368

Abstract

Highly-resistive low-temperature grown InGaAs, with a sub-500 fs carrier lifetime, is used as an all-optoelectronic continuous-wave terahertz photomixer system based on diode lasers. Interdigitated electrodes fabricated on epitaxial low-temperature grown In_0.3Ga_0.7As are used as photomixers to generate and detect radiation from microwave frequencies (<100 GHz) to beyond 1.0 THz.

Keywords

III-V semiconductors; electrical resistivity; gallium arsenide; indium compounds; microwave generation; microwave photonics; optoelectronic devices; semiconductor epitaxial layers; semiconductor lasers; submillimetre wave generation; 500 fs; InGaAs; carrier lifetime; diode lasers; epitaxial growth; interdigitated electrodes; low temperature growth; microwave frequency; microwave radiation detection; microwave radiation generation; optoelectronic continuous wave terahertz photomixer system; Charge carrier lifetime; Conductivity; Diode lasers; Frequency; Indium gallium arsenide; Molecular beam epitaxial growth; Optical fiber cables; Phase detection; Radiation detectors; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on

Print_ISBN

0-7803-8490-3

Type

conf

DOI

10.1109/ICIMW.2004.1422114

Filename

1422114