Title :
Silicon nanowire nonvolatile-memory with varying HfO2 charge trapping layer thickness
Author :
Zhu, X. ; Li, Qiliang ; Ioannou, D.E. ; Gu, D. ; Baumgart, H. ; Bonevich, J.E. ; Suehle, J.S. ; Richter, C.A.
Author_Institution :
ECE Dept., George Mason Univ., Fairfax, VA, USA
Abstract :
The authors have fabricated silicon nanowire (SiNW) based Al2O3/HfO2/SiO2 nonvolatile-memory (NVM) cells with varying HfO2 trapping layer thickness have been fabricated by using self-aligning approach. The cells exhibit excellent characteristics such as fast programming/erasing (P/E) speeds, good endurance and excellent retention. The P/E speed is not sensitive to the HfO2 layer thickness. The magnitude of the achievable memory window on the other hand is larger for the cells with thicker HfO2 layers. These results are all in good agreement with the TCAD simulation analysis.
Keywords :
aluminium compounds; electron traps; hafnium compounds; hole traps; nanowires; random-access storage; silicon compounds; Al2O3-HfO2-SiO2; TCAD simulation; charge trap; fast programming/erasing speed; self-aligning process; silicon nanowire nonvolatile memory; Aluminum oxide; Consumer electronics; Degradation; Electron traps; Hafnium oxide; Lithography; Nanowires; Nonvolatile memory; Silicon; Tunneling;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378132
