Semiconductor-dielectric interfacial study using spectral-spatial photocurrent probes and 1/f noise probe in organic field effect transistors

Organic field effect transistors (OFETs) are sensitive to the chemistry of the gate dielectric/semiconductor boundary both during and after fabrication. In particular, surface states can be introduced on polymer gate dielectrics that shift the threshold voltage if the dielectric layer is exposed to oxidizing agents prior to semiconductor deposition. To understand the interfacial properties can not only benefit practical applications but also further the understanding of transport mechanism in OFETs.