Title :
Ultrasonically stimulated modification of electrical characteristics of Hg1-xCdxTe epilayers
Author :
Sizov, F.F. ; Savkina, R.K. ; Smirnov, A.B.
Author_Institution :
V. Lashkaryov Inst. of Semicond. Phys., Nat. Acad. of Sci. of Ukraine, Kiev, Ukraine
fDate :
27 Sept.-1 Oct. 2004
Abstract :
The degradation of electrophysical characteristics of Hg1-xCdxTe thin films grown by LPE and MBE as a consequence of the high-frequency and high-intensity elastic deformation effect was investigated. It was determined that parameters of Hg1-xCdxTe thin films grown by MBE are stable to ultrasonic influence whereas for Hg1-xCdxTe thin films grown by LPE the mobility decrease and the change of the conductivity type at low magnetic field were observed. The best agreement between experiment and calculation was obtained in the frame of assumption about forming of the thin layer with opposite conductivity. The possible mechanism of the observing effects was analyzed.
Keywords :
II-VI semiconductors; cadmium compounds; carrier mobility; elastic deformation; electrical conductivity; mercury compounds; semiconductor epitaxial layers; ultrasonic effects; Hg1-xCdxTe; LPE; MBE; conductivity; electrical properties; electrophysical properties; high frequency elastic deformation effect; high intensity elastic deformation effect; thin film growth; ultrasonically stimulated modification; Conductivity; Degradation; Electric variables; Magnetic analysis; Magnetic fields; Magnetic films; Mercury (metals); Molecular beam epitaxial growth; Tellurium; Transistors;
Conference_Titel :
Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on
Print_ISBN :
0-7803-8490-3
DOI :
10.1109/ICIMW.2004.1422125
