Title :
Self-consistent thermal and electrical analysis of silicon carbide power DMOSFET heating and cooling
Author :
Akturk, A. ; Potbhare, S. ; Goldsman, N. ; Lelis, A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Maryland, College Park, MD, USA
Abstract :
We investigate the chip heating in silicon carbide (SiC) double diffused power MOSFETs at the resolution of DMOSFET cells (typically > 30,000 cells per power chip). To achieve this, we develop unique chip and device simulators for determining the coupled electrical and thermal performance.
Keywords :
power MOSFET; semiconductor device models; silicon compounds; thermal analysis; wide band gap semiconductors; DMOSFET cells; SiC; chip heating; coupled electrical performance; device simulators; electrical analysis; power DMOSFET cooling; power DMOSFET heating; self-consistent thermal analysis; silicon carbide double diffused power MOSFET; thermal performance; Cooling; Silicon carbide;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378139
