• DocumentCode
    3056905
  • Title

    Novel high-κ Ta2O5 resistive switching memory using IrOx metal electrode

  • Author

    Lin, C.I. ; Prakash, A. ; Maikap, S.

  • Author_Institution
    Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
  • fYear
    2009
  • fDate
    9-11 Dec. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Nanoscale nonvolatile memory devices with low power operation, high speed, good endurance, highly nonvolatility, and etc. are useful for future memory applications. Resistance random access memory (RRAM) is one of the most promising alternatives for next generation nonvolatile memory applications. High-κ based resistive memories have been reported by several groups. Solid electrolyte based memories are also reported by many groups. In this study, the resistive switching memory in an IrOx/Ta2O5/W structure has been investigated for the first time.
  • Keywords
    electrodes; high-κ dielectric thin films; iridium compounds; low-power electronics; random-access storage; solid electrolytes; tantalum compounds; tungsten; IrOx-Ta2O5-W; high-κ resistive switching memory; low power operation; metal electrode; nanoscale nonvolatile memory devices; resistance random access memory; solid electrolyte;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2009. ISDRS '09. International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-6030-4
  • Electronic_ISBN
    978-1-4244-6031-1
  • Type

    conf

  • DOI
    10.1109/ISDRS.2009.5378145
  • Filename
    5378145
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3056905