High-k Yb2O3 thin films as a sensing membrane for pH-ISFET application

Author

Pan, Tung-Ming ; Chen, Fa-Hsyang ; Lee, Cheng-Da ; Chien, Yu-Kai ; Ko, Ho-Ming

Author_Institution

Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan

fYear

2009

fDate

9-11 Dec. 2009

Firstpage

1

Lastpage

2

Abstract

This work investigates the physical and sensing properties of high-k Yb₂O₃ sensing thin films deposited on Si substrate by means of reactive sputtering. The Yb₂O₃ EIS device annealed at 800Â°C exhibited a high sensitivity of 55.5 mV/pH, a small hysteresis voltage of 3.76 mV, and a low drift rate. This can be explained by the well-crystallized Yb₂O₃ structure, a thinner silica layer, and a larger surface roughness. High-k Yb₂O₃ EIS devices show promise for use as sensing membrane in pH-ISFET application.

Keywords

annealing; chemical sensors; crystal structure; dielectric materials; electrolytes; high-k dielectric thin films; hysteresis; ion sensitive field effect transistors; pH measurement; semiconductor-insulator boundaries; surface roughness; ytterbium compounds; EIS device; Si; Yb₂O₃; annealing; crystal structure; drift rate; electrolyte-insulator-semiconductor device; high-k thin films; hysteresis voltage; ion sensitive field effect transistor; pH sensor; pH-ISFET; physical property; reactive sputtering; sensing membrane; sensing property; surface roughness; temperature 800 degC; thin silica layer; Annealing; High K dielectric materials; High-K gate dielectrics; Hysteresis; Rough surfaces; Semiconductor thin films; Silicon compounds; Sputtering; Surface roughness; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2009. ISDRS '09. International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-6030-4

Electronic_ISBN

978-1-4244-6031-1

Type

conf

DOI

10.1109/ISDRS.2009.5378146

Filename

5378146