• DocumentCode
    3056955
  • Title

    Field modulation in heavily-doped thin-body p+InGaAs for tunnel FETs

  • Author

    Guangle Zhou ; Kabeer, S. ; Wheeler, D. ; Seabaugh, A. ; Huili Xing

  • Author_Institution
    Dept. of Phys., Univ. of Notre Dame, Notre Dame, IN, USA
  • fYear
    2009
  • fDate
    9-11 Dec. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper, improved modulation of heavily-doped thin-body p+InGaAs channels is observed at 77 K over room temperature. A depletion-mode MISFET model was used to analyze the transport.
  • Keywords
    III-V semiconductors; MISFET; indium compounds; semiconductor doping; tunnel transistors; tunnelling; InGaAs; depletion-mode MISFET; field modulation; tunnel FET; Current measurement; Dielectrics; Electrical resistance measurement; FETs; Gold; Hall effect; Indium phosphide; Length measurement; MISFETs; MOSFETs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2009. ISDRS '09. International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-6030-4
  • Type

    conf

  • DOI
    10.1109/ISDRS.2009.5378147
  • Filename
    5378147
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3056955