Experimental study on uniaxially stressed Gate-All-Around silicon nanowires nMOSFETs on (110) silicon-on-insulator

Nanowire (NW) MOSFETs, as one promising candidate for future VLSI, have attracted much more attention. In conclusion, investigations on the uniaxial stress effects in (110)-oriented NWs nFETs have been described for the first time. On-current and electron mobility enhancements by longitude tensile stress are experimentally observed in both [110]and [100]-NWs. Wherein, [110]-NWs are much more sensitive to the applied stress, and the stress effects even turn to be larger in narrower NWs. These results shed light on the future applications of scaling down nanowirebased devices. The underlying physical mechanism are also studied and discussed.