High performance IGZO TFTs on steel: Device stability and circuit integration

Oxide-semiconductor based thin-film transistors (TFTs) have advanced tremendously off-late and provides an attractive alternative to silicon-based TFTs. They are usually wide-gap materials, transparent in the visible spectrum and thus render possible ubiquitous transparent electronics. Furthermore, large carrier mobilities in the amorphous phase is achievable due to high degree of localization and suggests that if the carrier concentration can be controlled, the properties of amorphous oxides are quite suitable for TFT applications. In this present study, we present room temperature fabrication and characterization of amorphous IGZO (Indium Gallium Zinc Oxide) based TFTs. Although numerous reports exist about IGZO TFTs, there is few that report high performance device characteristic without the need of post fabrication processes.