Title :
Fabrication approach for lateral InGaAs tunnel transistors
Author :
Wheeler, D. ; Kabeer, S. ; Yeqing Lu ; Vasen, T. ; Qin Zhang ; Guangle Zhou ; Clark, K. ; Haijun Zhu ; Yung-Chung Kao ; Fay, P. ; Kosel, T. ; Huili Xing ; Seabaugh, A.
Author_Institution :
Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA
Abstract :
In this work, the lateral InGaAs tunnel FET is configured and sized to enable gate control of the Zener (reverse bias) tunneling current. The p+InGaAs transistor channel is 4 nm thick with a n+p+ source injector and a thin 3/3 nm HfO2/Al2O3 high-k gate dielectric. Atomic-layer deposition (ALD) is used to deposit the gate dielectric.
Keywords :
Zener effect; aluminium compounds; atomic layer deposition; dielectric materials; field effect transistors; gallium arsenide; hafnium compounds; indium compounds; semiconductor device manufacture; tunnel transistors; tunnelling; HfO2-Al2O3; InGaAs; Zener tunneling current; atomic-layer deposition; gate dielectric; reverse bias; size 4 nm; transistor channel; tunnel FET; tunnel transistors; Aluminum oxide; FETs; Fabrication; Hafnium oxide; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Plasma temperature; Substrates; Wet etching;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
DOI :
10.1109/ISDRS.2009.5378160
