The growth and physical properties of HgCdMnZnTe: new material for IR photodetectors

The monocrystals of new semiconductor solid solution Hg_1-x-y-zCd_xMn_yZn_zTe with the content of manganese and zinc up to 5% have been presented. X-ray and mechanical investigations of these crystals have been carried out and their basic electrophysical parameters such as the band-gap energy, the intrinsic carriers´ concentration, the impurity concentration and activation energy, the mobility of charge carriers have been determined. It is shown that a new material has the perfect crystal structure and high stability of crystal lattice. The empirical formulas for calculations of band-gap energy and intrinsic carriers´ concentration of monocrystals like that are suggested. The obtained data allow announcing this material as an alternative one for infrared detectors for 3-5 μm and 8-14 μm spectral ranges.