• DocumentCode
    3057347
  • Title

    Backscattering coefficient in MOSFETs from an extended one-flux theory

  • Author

    Tang, Ting-wei ; Fischetti, Massimo V. ; Jin, Seonghoon

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Massachusetts, Amherst, MA, USA
  • fYear
    2009
  • fDate
    9-11 Dec. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper, we derive the expression of r along the line of the one-flux theory of McKelvey et al., Shockley, and Gildenblat with some improvements.
  • Keywords
    MOSFET; semiconductor device models; MOSFET; backscattering coefficient; extended one-flux theory; Backscatter; Boltzmann equation; Boundary conditions; Educational institutions; MOS devices; MOSFETs; Nanoscale devices; Scattering; USA Councils;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2009. ISDRS '09. International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-6030-4
  • Electronic_ISBN
    978-1-4244-6031-1
  • Type

    conf

  • DOI
    10.1109/ISDRS.2009.5378164
  • Filename
    5378164
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3057347