Optical properties of InN films grown by MBE at different conditions

Author

Chen, P.P. ; Makino, Hiroaki ; Wang, J.B. ; Li, T.X. ; Lu, W. ; Yao, T.

Author_Institution

Shanghai Inst. of Tech. Phys., Chinese Acad. of Sci., China

fYear

2004

fDate

27 Sept.-1 Oct. 2004

Firstpage

431

Lastpage

432

Abstract

InN films were grown by N₂ plasma-assisted molecular beam epitaxy (MBE) on Al₂O₃ substrate with different growth temperature T_s (from 200°C to 500°C). It was found that high crystal quality of InN films can be grown at higher temperature. The optical absorption measurement showed the band-gap energy of InN films decreases with increasing of the growth temperature. The photo-luminescence measurement indicated the band gap of InN films grown at 500°C was located about 1.0-1.1 eV.

Keywords

III-V semiconductors; Raman spectra; atomic force microscopy; carrier density; energy gap; indium compounds; molecular beam epitaxial growth; photoluminescence; plasma deposition; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors; 200 to 500 degC; Al₂O₃; InN; InN crystal quality; InN films; N₂ plasma assisted MBE; N₂ plasma assisted molecular beam epitaxy; Raman spectra; atomic force microscopy; band gap energy; optical absorption measurement; optical properties; photoluminescence; reflection high energy electron diffraction; Buffer layers; Gallium nitride; High speed optical techniques; Molecular beam epitaxial growth; Optical films; Photonic band gap; Plasma measurements; Plasma sources; Plasma temperature; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on

Print_ISBN

0-7803-8490-3

Type

conf

DOI

10.1109/ICIMW.2004.1422146

Filename

1422146