Title :
Vapor phase doping and sub-melt laser anneal for the fabrication of Si-based ultra-shallow junctions in sub-32 nm CMOS technology
Author :
Nguyen, N.D. ; Rosseel, E. ; Takeuchi, S. ; Everaert, J.-L. ; Loo, R. ; Goossens, J. ; Moussa, A. ; Clarysse, T. ; Caymax, M. ; Vandervorst, W.
Author_Institution :
IMEC vzw, Leuven, Belgium
Abstract :
The authors demonstrated that the combination of VPD and LA enables the fabrication of high quality, defect-free USJs with abrupt dopant profile. The results for PMOS with B-VPD are very promising for the 32 nm and the 22 nm technology nodes. In the case of NMOS, As-VPD and LA enable the fabrication of an USJ but the electrical deactivation of a large part of the in-diffused dopants is responsible for the high sheet resistance values.
Keywords :
CMOS integrated circuits; laser beam annealing; nanotechnology; semiconductor doping; CMOS technology; NMOS; PMOS; Si; abrupt dopant profile; electrical deactivation; nanotechnology; silicon based ultra-shallow junctions; size 22 nm; size 32 nm; sub-melt laser anneal; vapor phase doping; Atomic measurements; Boron; CMOS technology; Chemical lasers; Crystalline materials; Doping; Gas lasers; Materials science and technology; Optical device fabrication; Rapid thermal annealing;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378166
