Vapor phase doping and sub-melt laser anneal for the fabrication of Si-based ultra-shallow junctions in sub-32 nm CMOS technology

Author

Nguyen, N.D. ; Rosseel, E. ; Takeuchi, S. ; Everaert, J.-L. ; Loo, R. ; Goossens, J. ; Moussa, A. ; Clarysse, T. ; Caymax, M. ; Vandervorst, W.

Author_Institution

IMEC vzw, Leuven, Belgium

fYear

2009

fDate

9-11 Dec. 2009

Firstpage

1

Lastpage

2

Abstract

The authors demonstrated that the combination of VPD and LA enables the fabrication of high quality, defect-free USJs with abrupt dopant profile. The results for PMOS with B-VPD are very promising for the 32 nm and the 22 nm technology nodes. In the case of NMOS, As-VPD and LA enable the fabrication of an USJ but the electrical deactivation of a large part of the in-diffused dopants is responsible for the high sheet resistance values.

Keywords

CMOS integrated circuits; laser beam annealing; nanotechnology; semiconductor doping; CMOS technology; NMOS; PMOS; Si; abrupt dopant profile; electrical deactivation; nanotechnology; silicon based ultra-shallow junctions; size 22 nm; size 32 nm; sub-melt laser anneal; vapor phase doping; Atomic measurements; Boron; CMOS technology; Chemical lasers; Crystalline materials; Doping; Gas lasers; Materials science and technology; Optical device fabrication; Rapid thermal annealing;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2009. ISDRS '09. International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-6030-4

Electronic_ISBN

978-1-4244-6031-1

Type

conf

DOI

10.1109/ISDRS.2009.5378166

Filename

5378166