DocumentCode
3057532
Title
Depth-resolved cathodoluminescence spectroscopy as a probe of defect structure in oxides
Author
Brillson, L.J. ; Dong, Y. ; Zhang, J. ; Walsh, S. ; Mosbacker, H.L. ; Doutt, D. ; Hetzer, M.
Author_Institution
205 Dreese Lab., Ohio State Univ., Columbus, OH, USA
fYear
2009
fDate
9-11 Dec. 2009
Firstpage
1
Lastpage
2
Abstract
Depth-resolved cathodoluminescence spectroscopy (DRCLS) is a powerful technique for probing the nature of defects in oxides, both electronically and spatially on a nanometer scales. The information derived from this technique provides a tool to guide the growth and processing of state-of-the-art semiconductors and dielectrics for micro and opto-electronics. DRCLS is particularly effective in probing electronic and chemical structure within ultrathin films, beyond the capabilities of conventional techniques. This talk highlights the capabilities of DRCLS with recent results from conventional oxides such as ZnO, to complex oxides such as the perovskite titanates, and the high-K dielectric HfO2. These studies establish the physical nature of native point defects in these materials as well as their spatial distribution on a nanometer scale.
Keywords
cathodoluminescence; point defects; depth-resolved cathodoluminescence spectroscopy; oxides; point defects; ultrathin film; Chemicals; Dielectric materials; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Probes; Semiconductor films; Spectroscopy; Titanium compounds; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-6030-4
Electronic_ISBN
978-1-4244-6031-1
Type
conf
DOI
10.1109/ISDRS.2009.5378171
Filename
5378171
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