DocumentCode
3057741
Title
Discrete impurity and mobility in drift-diffusion simulations for device characteristics variability
Author
Karasawa, Takahiko ; Nakanishi, Kohei ; Sano, Nobuyuki
Author_Institution
Inst. of Appl. Phys., Univ. of Tsukuba, Tsukuba, Japan
fYear
2009
fDate
9-11 Dec. 2009
Firstpage
1
Lastpage
2
Abstract
In this paper, effective mobility obtained form drift-diffusion under discrete impurities distributed randomly in n-doped Si-substrates with various cut-off parameters were studied and demonstrated using 3D MC simulation and other related methods.
Keywords
MOSFET; Monte Carlo methods; carrier mobility; diffusion; elemental semiconductors; semiconductor device models; silicon; 3D MC simulation; Si; device characteristics; discrete impurity; drift-diffusion simulations; effective mobility; Educational institutions; Fluctuations; Impurities; Nanoscale devices; Physics; Poisson equations; Scattering; Smoothing methods; Stress; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-6030-4
Electronic_ISBN
978-1-4244-6031-1
Type
conf
DOI
10.1109/ISDRS.2009.5378179
Filename
5378179
Link To Document