Title :
Charge transport in InN nanowires investigated by scanning probe microscopy
Author :
Liu, Jie ; Cai, Zhihua ; Quddus, Ehtesham ; Koley, Goutam
Author_Institution :
Dept. of Electr. Eng., Univ. of South Carolina, Columbia, SC, USA
Abstract :
In this paper, utilized scanning current voltage microscopy (SVIM) techniques was used to investigate charge transport and trapping in the individual nanowires InN (NWs) and nanonetworks. SVIM images indicate non-uniform surface barrier height on NWs, strongly affected by surface deformations.The Ip-Vp measurements indicate type-II heterostructure band alignment causing unusually large probe current under negative bias. The conductivity of the NWs was found to be very strongly dependent on the surface band bending, which can be explained by considering large electron accumulation at the surface.
Keywords :
III-V semiconductors; deformation; electron mobility; indium compounds; nanowires; scanning probe microscopy; semiconductor quantum wires; wide band gap semiconductors; InN; charge transport; charge trapping; electron accumulation; nanonetworks; nanowires; negative bias; nonuniform surface barrier height; probe current; scanning current voltage microscopy; scanning probe microscopy; surface band bending; surface deformations; type-II heterostructure band alignment; Conductivity measurement; Crystalline materials; Current measurement; Educational institutions; Electrons; Gold; Nanowires; Scanning probe microscopy; Spatial resolution; Surface morphology;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378182
