• DocumentCode
    3057900
  • Title

    Influence of InGaN/GaN/Si electroluminescent heterostructure design and quantum well thickness on their luminescent and laser properties

  • Author

    Pavlovskii, V.N. ; Lutsenko, E.V. ; Danilchyk, A.V. ; Zubialevich, V.Z. ; Muravitskaya, A.V. ; Yablonskii, G.P. ; Kalisch, H. ; Jansen, R.H. ; Schineller, B. ; Heuken, M.

  • Author_Institution
    Stepanov Inst. of Phys., NAS of Belarus, Minsk, Belarus
  • fYear
    2010
  • fDate
    10-14 Sept. 2010
  • Firstpage
    265
  • Lastpage
    267
  • Abstract
    Employing a strain-reducing layer stack between Si substrate and MQW layers as well as optimization of quantum well thicknesses of InGaN/GaN/Si MQW electroluminescent heterostructures led to disappearance of cracks and pinholes, to reduction of the laser threshold down to 75 kW/cm2 at 433 nm under N2 laser emission excitation.
  • Keywords
    III-V semiconductors; electroluminescent devices; gallium compounds; indium compounds; optical pumping; quantum well lasers; semiconductor heterojunctions; wide band gap semiconductors; InGaN-GaN-Si; MQW laser; N2 laser emission excitation; Si; electroluminescent heterostructure design; laser properties; quantum well thickness; strain-reducing layer stack; wavelength 433 nm; Aluminum gallium nitride; Gallium nitride; Lead; Quantum well devices; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Optoelectronics and Lasers (CAOL), 2010 International Conference on
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-1-4244-7043-3
  • Type

    conf

  • DOI
    10.1109/CAOL.2010.5634186
  • Filename
    5634186
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3057900