Title :
Influence of InGaN/GaN/Si electroluminescent heterostructure design and quantum well thickness on their luminescent and laser properties
Author :
Pavlovskii, V.N. ; Lutsenko, E.V. ; Danilchyk, A.V. ; Zubialevich, V.Z. ; Muravitskaya, A.V. ; Yablonskii, G.P. ; Kalisch, H. ; Jansen, R.H. ; Schineller, B. ; Heuken, M.
Author_Institution :
Stepanov Inst. of Phys., NAS of Belarus, Minsk, Belarus
Abstract :
Employing a strain-reducing layer stack between Si substrate and MQW layers as well as optimization of quantum well thicknesses of InGaN/GaN/Si MQW electroluminescent heterostructures led to disappearance of cracks and pinholes, to reduction of the laser threshold down to 75 kW/cm2 at 433 nm under N2 laser emission excitation.
Keywords :
III-V semiconductors; electroluminescent devices; gallium compounds; indium compounds; optical pumping; quantum well lasers; semiconductor heterojunctions; wide band gap semiconductors; InGaN-GaN-Si; MQW laser; N2 laser emission excitation; Si; electroluminescent heterostructure design; laser properties; quantum well thickness; strain-reducing layer stack; wavelength 433 nm; Aluminum gallium nitride; Gallium nitride; Lead; Quantum well devices; Silicon; Substrates;
Conference_Titel :
Advanced Optoelectronics and Lasers (CAOL), 2010 International Conference on
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-7043-3
DOI :
10.1109/CAOL.2010.5634186
