Title :
Electrostatic discharge (ESD) protection of RF integrated circuits
Author :
Liou, Juin J. ; Chang Jiang ; Feng Chia
Author_Institution :
Univ. of Central Florida, Orlando, FL, USA
Abstract :
Electrostatic discharge (ESD) induced failures continue to be a major reliability concern in the semiconductor industry. Such a concern will in fact be intensified as the CMOS technology is scaling toward the 22-nm and beyond. This paper covers the issues and challenges pertinent to the design of electrostatic discharge (ESD) protection solutions of CMOS-based RF integrated circuits.
Keywords :
CMOS integrated circuits; electrostatic discharge; integrated circuit reliability; radiofrequency integrated circuits; CMOS technology; ESD; RF integrated circuits; electrostatic discharge induced failures; electrostatic discharge protection; semiconductor industry; size 22 nm; CMOS integrated circuits; CMOS technology; Discharges (electric); Electrostatic discharges; Radio frequency; Silicon;
Conference_Titel :
Circuits and Systems (APCCAS), 2012 IEEE Asia Pacific Conference on
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-4577-1728-4
DOI :
10.1109/APCCAS.2012.6419071
