Title :
Performance boost for In0.53Ga0.47As channel N-MOSFET using silicon nitride liner stressor with high tensile stress
Author :
Hock-Chun Chin ; Gong, Xiao ; Guo, Huaxin ; Zhou, Qian ; Koh, Shao-Ming ; Lee, Hock Koon ; Shi, Luping ; Yeo, Yee-Chia
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore (NUS), Singapore, Singapore
Abstract :
In this paper, strained In0.53Ga0.47As MOSFET with SiN liner stressor was demonstrated for the first time. An advanced surface passivation (SiH4+NH3) technology was also employed for achieving good electrical characteristics. The SiN liner stressor gives rise to lateral tensile strain in the channel for significant electron mobility and drive current enhancement. High-stress SiN liner is a promising stressor for boosting performance in future III-V MOSFETs.
Keywords :
III-V semiconductors; MOSFET; electron mobility; gallium arsenide; indium compounds; internal stresses; passivation; silicon compounds; III-V MOSFETs; In0.53Ga0.47As; N-MOSFET; SiN; boost performance; boosting performance; drive current enhancement; electron mobility; high tensile stress; lateral tensile strain; silicon nitride liner stressor; surface passivation; Data engineering; Dielectric substrates; Educational institutions; Electron mobility; III-V semiconductor materials; MOSFET circuits; Silicon compounds; Strain control; Tensile strain; Tensile stress;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378197
