Title :
Variation analysis of TiN FinFETs
Author :
Endo, K. ; Matsukawa, T. ; Ishikawa, Y. ; Liu, Y.X. ; O´uchi, S. ; Sakamoto, K. ; Tsukada, J. ; Yamauchi, H. ; Masahara, M.
Author_Institution :
Nanoelectron. Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
Abstract :
IN this paper, various FinFETs with the different fin-width and gate-length were fabricated and characterised using SEM and cross-sectional STEM imaging. It was found that the standard deviations of the Vth of the pMOS and nMOS FinFETs are almost the same and the main Vth variation source was the work function variation of the TiN metal gate. Also, the on-current variation for TiN FinFETs was predominated by the Vth variation. Thus, the reduction of the work function variation of the metal-gate FinFETs is the key for stabilizing the characteristics of the FinFETs and improving circuit performance.
Keywords :
MOSFET; scanning electron microscopy; scanning-transmission electron microscopy; titanium compounds; work function; SEM; TiN; Vth variation source; cross-sectional STEM imaging; fin-width; gate-length; metal gate; nMOS FinFETs; on-current variation; pMOS FinFETs; work function variation; CMOS technology; Circuit stability; Doping; Educational institutions; Fabrication; FinFETs; MOS devices; MOSFET circuits; Nanoelectronics; Tin;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378198
