Title :
W band silicon dielectric resonator for semiconductor substrate characterization
Author :
Blondy, P. ; Cros, D. ; Guillon, P. ; Balleras, F. ; Massit, C.
Author_Institution :
Inst. de Recherche en Commun. Opt. et Microondes, CNRS, Limoges, France
Abstract :
This paper is about the use of planar millimeter wave whispering gallery dielectric resonator modes for material characterization. Experimental results and theoretical ones obtained with finite element method permit to determine electromagnetic characteristics of a material like silicon. The results on loss factor are compared to basic electromagnetic theory. It is shown that high resistivity silicon dielectric resonators could be used to build high Q millimeter wave resonators.
Keywords :
dielectric resonators; elemental semiconductors; finite element analysis; millimetre wave measurement; silicon; substrates; Si; W-band; electromagnetic characteristics; finite element method; loss factor; planar millimeter wave whispering gallery silicon dielectric resonator; semiconductor substrate; Conductivity; Conductors; Dielectric loss measurement; Dielectric losses; Dielectric materials; Dielectric substrates; Frequency; Millimeter wave technology; Permittivity; Silicon;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.700624
