Title :
Simulation study of device physics issues in III–V MOSFETs at 10 nm node
Author :
Liu, Yang ; Wang, Xufeng ; Luisier, Mathieu ; Lundstrom, Mark S.
Author_Institution :
Network for Comput. Nanotechnol., Purdue Univ., West Lafayette, IN, USA
Abstract :
In this paper, numerical simulations were used to study the device physics in the InxGa1-xAs MOSFETs with a gate length of 15 nm (initial) and 10 nm after optimizing the device structure. Key device metrics were identified at the ballistic limit using a 2-D Schrodinger-Poisson solver with effective masses imported from accurate tight-binding calculations. It was concluded that the simulation of a prototype for III-V quantum well MOSFETs with a gate length of 15 nm predicts decent performances if Si-matched series resistance can be obtained. The device has very high injection velocities, but suffers from significant S/D leakage under offstate. As a next step, the possibility of designing high-performance III-V MOSFETs at a gate length of 10 nm will be investigated.
Keywords :
III-V semiconductors; MOSFET; Poisson equation; Schrodinger equation; ballistic transport; effective mass; gallium arsenide; indium compounds; optimisation; semiconductor device models; semiconductor quantum wells; tight-binding calculations; 2-D Schrodinger-Poisson solver; III-V quantum well MOSFETs; InxGa1-xAs; S-D leakage; ballistic limit; device metrics; device structure optimization; effective mass; high-injection velocity; numerical simulations; prototype simulation; size 10 nm; size 15 nm; tight-binding calculations; CMOS technology; Educational institutions; Effective mass; Electron devices; HEMTs; III-V semiconductor materials; Logic devices; MOSFETs; Nanotechnology; Physics;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378204
