DocumentCode
3058407
Title
High linear transconductor for multiband CMOS receiver
Author
Ko-Chi Kuo ; Shan-Yu Chen ; Shih-Min Tseng
Author_Institution
Dept. of Comput. Sci. & Eng., Nat. Sun Yat-sen Univ., Kaohsiung, Taiwan
fYear
2012
fDate
2-5 Dec. 2012
Firstpage
535
Lastpage
538
Abstract
This paper presents a transconductor for the wireless communication receiver applications. The operation range of the proposed transconductor can be used in Bluetooth, cdma2000, wideband CDMA, and IEEE 802.11a/g/b/n wireless LAN. By using floating transistor architecture in the input stage of transconductor, the proposed design can effectively enhance the THD performance. In addition, the MOS biased in the triode region combined with the current multiplier can achieve the voltage-to-current conversion. The wide tuning range of the proposed OTA can be obtained by a trans-linear loop, and the OTA operating in weak inversion region can significantly achieve a lower transconductance value. Simulation results show that the operation frequency can be up to 22MHz for the different wireless communication applications with 1.9mW power consumption in the TSMC 0.18μm process.
Keywords
CMOS integrated circuits; code division multiple access; radio receivers; Bluetooth; IEEE 802.11a/g/b/n wireless LAN; cdma2000; floating transistor architecture; high linear transconductor; multiband CMOS receiver; power consumption; transconductance value; translinear loop; voltage to current conversion; weak inversion region; wideband CDMA; wireless communication application; wireless communication receiver application; CMOS integrated circuits; Equations; Linearity; Receivers; Transconductance; Transistors; Tuning;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (APCCAS), 2012 IEEE Asia Pacific Conference on
Conference_Location
Kaohsiung
Print_ISBN
978-1-4577-1728-4
Type
conf
DOI
10.1109/APCCAS.2012.6419090
Filename
6419090
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