Title :
Temperature switching of the extraordinary THz transmission through subwavelength apertures
Author :
Rivas, J. Gomez ; Janke, C. ; Bolivar, P. Haring ; Kurz, H.
Author_Institution :
Inst. fur Halbeitertech., Rheinisch-Westfalische Tech. Hochschule, Aachen, Germany
fDate :
27 Sept.-1 Oct. 2004
Abstract :
We investigate the enhanced transmission of THz radiation through semiconductor gratings of subwavelength apertures. This enhanced transmission, being due to the tunnelling of surface plasmon polaritons, can be switched by modifying the temperature of the grating. We have measured the transmission of THz radiation through a grating of sub-wavelength apertures structured on a silicon wafer. A marked resonance for a wavelength fivefold larger than the size of the aperture is observed. This resonance is attributed to the excitation and tunneling of SPPs. The characteristics of SPPs are controlled by changing the carrier density, which can be done in semiconductors by varying the temperature.
Keywords :
carrier density; diffraction gratings; elemental semiconductors; polaritons; resonant tunnelling; silicon; submillimetre waves; surface plasmon resonance; surface plasmons; Si; THz radiation; THz transmission; carrier density; semiconductor gratings; silicon wafer; subwavelength apertures; surface plasmon polaritons; temperature switching; tunneling; Apertures; Frequency; Gratings; Optical films; Optical surface waves; Permittivity; Plasmons; Temperature; Tunneling; Wavelength measurement;
Conference_Titel :
Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on
Print_ISBN :
0-7803-8490-3
DOI :
10.1109/ICIMW.2004.1422183
