Title :
Analysis and modeling of the pinch-off point in a lightly doped asymmetrically biased double gate MOSFET
Author :
Weidemann, Michaela ; Schwarz, Mike ; Kloes, Alexander ; Iniguez, Benjamin
Abstract :
In this work, analysis of a completely depleted double gate MOSFET device, whereby each channel is looked at individually, is presented. The pinch-off point in a lightly doped asymmetrically biased double gate MOSFET is modelled.
Keywords :
MOSFET; semiconductor device models; completely depleted double gate MOSFET device modeling; lightly doped asymmetrically biased double gate MOSFET; pinch-off point analysis; Automatic control; Current density; Educational institutions; Electrons; FETs; Information analysis; MOSFET circuits; Solid modeling; Threshold voltage; Voltage control;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378211
