Title :
Ultrafast nonlinear optical effects in semiconductor quantum wells resonantly driven by few-cycle Terahertz pulses
Author :
Lee, Yun-Shik ; Jameson, A.D. ; Tomaino, J.L. ; Prineas, J.P. ; Steiner, J.T. ; Kira, M. ; Koch, S.W.
Author_Institution :
Dept. of Phys., Oregon State Univ., Corvallis, OR, USA
Abstract :
The exciton binding energy in GaAs-based quantum-well (QW) structures is in the range of ~10 meV, which falls in the terahertz (THz) regime. THz-induced nonlinear optical effects of excitons in QWs are of great interest because they provide new insights into the quantum coherence and wavepacket dynamics in semiconductors. This paper presents a time-resolved study to observe resonant interactions of strong narrowband THz pulses with coherent excitons in QWs, where the THz radiation is tuned near the 1s-2p excitonic transition and the THz pulse duration (~3 ps) is comparable with the exciton dephasing time.
Keywords :
III-V semiconductors; excitons; gallium arsenide; optical coherent transients; optical pulse generation; optical pumping; semiconductor quantum wells; terahertz wave generation; time resolved spectra; 1s-2p excitonic transition; GaAs; THz pulse duration; THz-induced nonlinear optical effects; binding energy; coherent excitons; exciton dephasing time; few-cycle terahertz pulses; quantum coherence; resonant interactions; semiconductor quantum wells; semiconductors; strong narrowband THz pulses; time-resolved study; ultrafast nonlinear optical effects; wavepacket dynamics; Delay effects; Excitons; Narrowband; Nonlinear optics; Optical pulses; Optical pumping; Pulse amplifiers; Resonance; Stimulated emission; Ultrafast optics;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378213
