Title :
The ITRS metrology roadmap
Author :
Diebold, Alain C.
Author_Institution :
Coll. of Nanoscale Sci. & Eng., U. Albany, Albany, NY, USA
Abstract :
This paper was focused on the 2009 international technology metrology roadmap for semiconductors based on front end processes, interconnect, lithography, and process integration roadmaps. Recent measurement innovations for high-k-metal gate material stack and measurement necessary for new transistor design were discussed. Graphene was emphasized for characterisation and device applications and properties were analyzed using methods such as TEM, LEEM, nano-Raman and several scanned probe methods, and other multiscale simulations.
Keywords :
CMOS integrated circuits; Raman spectra; dielectric materials; graphene; interconnections; lithography; low energy electron diffraction; semiconductor device measurement; semiconductor technology; transistors; transmission electron microscopy; C; ITRS metrology roadmap; LEEM; TEM; device applications; front end processes; graphene; high-k-metal gate material stack; interconnect; international technology metrology roadmap; lithography; multiscale simulations; nano-Raman spectroscopy; process integration; scanned probe methods; transistor design; CMOS process; Dielectric materials; Dielectric measurements; Educational institutions; Etching; Integrated circuit interconnections; Lithography; Metrology; Research and development; Uncertainty;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378220
