Title :
The benefits and current progress of SiC SGTOs for pulse power applications
Author :
Ogunniyi, Aderinto ; O´Brien, Heather ; Lelis, Aivars ; Scozzie, Charles ; Shaheen, William ; Agarwal, Anant ; Zhang, Jon ; Callanan, Robert ; Temple, Victor
Author_Institution :
US Army Res. Lab., Adelphi, CA, USA
Abstract :
Pulse power systems require power switches to operate at higher speeds and higher temperatures to meet the demand for smaller and higher power density systems. The paper presents the SiC SGTO (super gate turn-off thyristor) designed by SPCO and Cree. The device has superior switching and peak current handling capability and a promising candidate for pulse power applications.
Keywords :
power electronics; pulse circuits; silicon compounds; thyristor applications; thyristors; wide band gap semiconductors; SGTO; SiC; power switch; pulse power applications; super gate turn-off thyristor; Charge carrier lifetime; Current density; Educational institutions; Pulse modulation; Pulse power systems; Silicon carbide; Space vector pulse width modulation; Temperature; Thermal conductivity; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378223
