DocumentCode
3058705
Title
The benefits and current progress of SiC SGTOs for pulse power applications
Author
Ogunniyi, Aderinto ; O´Brien, Heather ; Lelis, Aivars ; Scozzie, Charles ; Shaheen, William ; Agarwal, Anant ; Zhang, Jon ; Callanan, Robert ; Temple, Victor
Author_Institution
US Army Res. Lab., Adelphi, CA, USA
fYear
2009
fDate
9-11 Dec. 2009
Firstpage
1
Lastpage
2
Abstract
Pulse power systems require power switches to operate at higher speeds and higher temperatures to meet the demand for smaller and higher power density systems. The paper presents the SiC SGTO (super gate turn-off thyristor) designed by SPCO and Cree. The device has superior switching and peak current handling capability and a promising candidate for pulse power applications.
Keywords
power electronics; pulse circuits; silicon compounds; thyristor applications; thyristors; wide band gap semiconductors; SGTO; SiC; power switch; pulse power applications; super gate turn-off thyristor; Charge carrier lifetime; Current density; Educational institutions; Pulse modulation; Pulse power systems; Silicon carbide; Space vector pulse width modulation; Temperature; Thermal conductivity; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-6030-4
Electronic_ISBN
978-1-4244-6031-1
Type
conf
DOI
10.1109/ISDRS.2009.5378223
Filename
5378223
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