Title :
Analytical expressions of transient thermal response of self-heating semiconductor devices
Author :
Zhu, Y. ; Twynam, J.K. ; Yagura, M. ; Hasegawa, M. ; Eguchi, Y. ; Yamada, A. ; Suematsu, E. ; Sakuno, K. ; Sato, H. ; Hashizurne, N.
Author_Institution :
Central Res. Labs., Sharp Corp., Nara, Japan
Abstract :
Analytical expressions of the transient thermal response of self-heating devices have been derived based on a feedback amplifier circuit model yielding accurate methods to extract the thermal time constant in both the time and frequency domains. The transient thermal responses of GaInP/GaAs HBT were measured and explained using the expressions derived.
Keywords :
III-V semiconductors; feedback amplifiers; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor device models; transient response; GaInP-GaAs; GaInP/GaAs HBT; feedback amplifier circuit model; self-heating semiconductor device; thermal time constant; transient thermal response; Feedback amplifiers; Feedback circuits; Gallium arsenide; Heterojunction bipolar transistors; Negative feedback; Semiconductor devices; State feedback; Thermal conductivity; Thermal resistance; Transient analysis;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.700626
