Title :
Materials issues for AlGaInP visible light emitters
Author :
Bland, Stephen W.
Author_Institution :
Epitaxial Products Int. Ltd., St. Mellons, UK
Abstract :
We have described the key materials issues associated with the MOCVD growth of AlGaInP based visible light emitters and have briefly highlighted their influence on the final device performance. It is important to understand, control and optimise each of these parameters in arriving at a final epitaxial device layer structure
Keywords :
aluminium compounds; AlGaInP; MOCVD growth; device performance; epitaxial device layer structure; materials issues; visible light emitters;
Conference_Titel :
Wide Bandgap Semiconductor Light Emitters (Digest No: 1996/233), IEE Colloquium on
Conference_Location :
London
DOI :
10.1049/ic:19961227
