• DocumentCode
    3058893
  • Title

    Materials issues for AlGaInP visible light emitters

  • Author

    Bland, Stephen W.

  • Author_Institution
    Epitaxial Products Int. Ltd., St. Mellons, UK
  • fYear
    1996
  • fDate
    35354
  • Firstpage
    42522
  • Lastpage
    42526
  • Abstract
    We have described the key materials issues associated with the MOCVD growth of AlGaInP based visible light emitters and have briefly highlighted their influence on the final device performance. It is important to understand, control and optimise each of these parameters in arriving at a final epitaxial device layer structure
  • Keywords
    aluminium compounds; AlGaInP; MOCVD growth; device performance; epitaxial device layer structure; materials issues; visible light emitters;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Wide Bandgap Semiconductor Light Emitters (Digest No: 1996/233), IEE Colloquium on
  • Conference_Location
    London
  • Type

    conf

  • DOI
    10.1049/ic:19961227
  • Filename
    641911
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3058893