DocumentCode
3058930
Title
Droop studies for high-performance InGaN blue light-emitting diodes
Author
Jong-In Shim ; Hyunsung Kim ; Dong-Pyo Han ; Dong-Soo Shin
Author_Institution
Dept. of Electron. & Commun. Eng., Hanyang Univ., Ansan, South Korea
fYear
2013
fDate
June 30 2013-July 4 2013
Firstpage
1
Lastpage
2
Abstract
An origin of the efficiency droop has been suggested as the saturation of the radiative recombination rate in InGaN quantum well at low current and subsequent increase in the nonradiative recombination rates at high current.
Keywords
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; semiconductor quantum wells; wide band gap semiconductors; InGaN; high-performance blue light-emitting diodes; quantum well; radiative-nonradiative recombination rate; Charge carrier density; Electroluminescence; Light emitting diodes; Radiative recombination; Shape;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location
Kyoto
Type
conf
DOI
10.1109/CLEOPR.2013.6600207
Filename
6600207
Link To Document