Title :
Physical model and mesh-size dependence in drift-diffusion simulations for single-event effects by heavy ions
Author :
Shibano, Nozomi ; Sano, Nobuyuki ; Tosaka, Yoshiharu ; Furuta, Hiroshi ; Tsutsui, Masafumi ; Imamura, Takeshi
Author_Institution :
Inst. of Appl. Phys., Univ. of Tsukuba, Tsukuba, Japan
Abstract :
In summary, we have constructed a mesh-generation scheme appropriate for arbitrary ion tracks in 3D DD simulations for SEEs and shown that the transient current response is sensitive to the mesh-size and physical models employed in DD simulations.
Keywords :
circuit simulation; mesh generation; transient response; arbitrary ion tracks; drift-diffusion simulations; heavy ions; mesh-generation scheme; mesh-size dependence; physical model; single-event effects; transient current response; CMOS logic circuits; CMOS technology; Charge carrier density; Circuit simulation; Educational institutions; Gold; Mesh generation; Paper technology; Physics; Substrates;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378238
