Title :
Development of highly-uniform 270-nm deep-ultraviolet light-emitting diodes
Author :
Mino, T. ; Hirayama, Hiroshi ; Noguchi, Naoya ; Takano, Takeshi ; Tsubaki, Keishi
Author_Institution :
Inst. of Phys. & Chem. Res. (RIKEN), Wako, Japan
fDate :
June 30 2013-July 4 2013
Abstract :
Development of high-quality and highly-uniform AlN/sapphire templates by using a NH3 pulsed-flow method enabled the fabrication of highly-uniform 270-nm AlGaN-based deep-ultraviolet light-emitting diodes with the external quantum efficiency of over 2%.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; light emitting diodes; optical fabrication; wide band gap semiconductors; AlGaN; NH3 pulsed-flow method; external quantum efficiency; high-quality highly-uniform AlN-sapphire templates; highly-uniform deep-ultraviolet light-emitting diodes; wavelength 270 nm; Aluminum gallium nitride; Atomic measurements; Epitaxial growth; Epitaxial layers; III-V semiconductor materials; Light emitting diodes; Substrates;
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location :
Kyoto
DOI :
10.1109/CLEOPR.2013.6600211
