• DocumentCode
    3059051
  • Title

    Development of highly-uniform 270-nm deep-ultraviolet light-emitting diodes

  • Author

    Mino, T. ; Hirayama, Hiroshi ; Noguchi, Naoya ; Takano, Takeshi ; Tsubaki, Keishi

  • Author_Institution
    Inst. of Phys. & Chem. Res. (RIKEN), Wako, Japan
  • fYear
    2013
  • fDate
    June 30 2013-July 4 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Development of high-quality and highly-uniform AlN/sapphire templates by using a NH3 pulsed-flow method enabled the fabrication of highly-uniform 270-nm AlGaN-based deep-ultraviolet light-emitting diodes with the external quantum efficiency of over 2%.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; light emitting diodes; optical fabrication; wide band gap semiconductors; AlGaN; NH3 pulsed-flow method; external quantum efficiency; high-quality highly-uniform AlN-sapphire templates; highly-uniform deep-ultraviolet light-emitting diodes; wavelength 270 nm; Aluminum gallium nitride; Atomic measurements; Epitaxial growth; Epitaxial layers; III-V semiconductor materials; Light emitting diodes; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
  • Conference_Location
    Kyoto
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2013.6600211
  • Filename
    6600211
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3059051