Nitrogen incorporation by plasma immersion ion implantation on electrical characteristics of high-k gated MOS devices with SiGe channel

Author

Fu, Chung-Hao ; Chang-Liao, Kuei-Shu ; Du, Li-Wei ; Wang, Tien-Ko ; Wen-Fa Tsai ; Ai, Chi-Fong

Author_Institution

Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan

fYear

2009

fDate

9-11 Dec. 2009

Firstpage

1

Lastpage

2

Abstract

Metal-oxide-semiconductor devices with SiGe channel and nitridation treatment using plasma immersion ion implantation (PIII) were studied in this work. The reliability in terms of stress-induced leakage and stress-induced Vfb shift is improved for device with a PIII treatment. The EOT value of MOS device can be reduced to 9.6 Â¿ by employing 30% Ge content in SiGe channel and PIII nitridation.

Keywords

Ge-Si alloys; MOS capacitors; leakage currents; nitridation; nitrogen; plasma immersion ion implantation; semiconductor materials; PIII treatment; SiGe channel; SiGe:N; electrical properties; equivalent oxide thickness; high-k gated MOS devices; metal-oxide-semiconductor devices; nitridation treatment; nitrogen incorporation; plasma immersion ion implantation; stress-induced leakage; stress-induced voltage shift; Capacitance-voltage characteristics; Electric variables; Germanium silicon alloys; High K dielectric materials; High-K gate dielectrics; Leakage current; MOS devices; Nitrogen; Plasma immersion ion implantation; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2009. ISDRS '09. International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-6030-4

Electronic_ISBN

978-1-4244-6031-1

Type

conf

DOI

10.1109/ISDRS.2009.5378242

Filename

5378242