Title :
Local photoluminescence properties of InGaN green laser structure on (0001) GaN substrate
Author :
Kaneta, Akio ; Hira, T. ; Yoon Seok Kim ; Funato, Mitsuru ; Kawakami, Y. ; Miyoshi, Takanori ; Nagahama, Shin-ichi
Author_Institution :
Dept. of Electron. Sci. & Eng., Kyoto Univ., Kyoto, Japan
fDate :
June 30 2013-July 4 2013
Abstract :
The spatial variation of the PL intensities and peak wavelengths are drastically suppressed in InGaN green laser structure fabricated on (0001) GaN substrate. This result is thought to contribute to low threshold current density.
Keywords :
III-V semiconductors; current density; gallium compounds; indium compounds; photoluminescence; semiconductor lasers; GaN; InGaN; low threshold current density; semiconductor lasers; Diode lasers; Fluctuations; Gallium nitride; Green products; Semiconductor lasers; Substrates;
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location :
Kyoto
DOI :
10.1109/CLEOPR.2013.6600213
