Title :
GaN/AlGaN based quantum cascade laser structures emitting at 1.3–2.8 THz
Author :
Terashima, W. ; Hirayama, Hiroshi
Author_Institution :
Quantum Optodevice Lab., RIKEN, Wako, Japan
fDate :
June 30 2013-July 4 2013
Abstract :
Terahertz emissions at 1.3 to 2.8 THz were achieved at GaN/AlGaN based quantum cascade laser structures. From investigations of polarization and voltage dependence electroluminescence (EL) measurements, we proved conclusively intersubband nature of the EL peak.
Keywords :
III-V semiconductors; aluminium compounds; electroluminescence; gallium compounds; light polarisation; microwave photonics; quantum cascade lasers; wide band gap semiconductors; GaN-AlGaN; frequency 1.3 THz to 2.8 THz; intersubband nature; polarization dependence electroluminescence measurements; quantum cascade laser structures; terahertz emission; voltage dependence electroluminescence measurements; Aluminum gallium nitride; Gallium nitride; III-V semiconductor materials; Quantum cascade lasers; Substrates; Temperature measurement; Voltage measurement;
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location :
Kyoto
DOI :
10.1109/CLEOPR.2013.6600216
