Title :
Highly reconfigurable and error tolerant threshold logic gates based on nanoscale DG-MOSFETs
Author :
Kaya, Savas ; Ting, Darwin T Y ; Hamed, Hesham F A
Author_Institution :
Sch. of EE & CS, Ohio Univ., Athens, OH, USA
Abstract :
We focus in this work on threshold logic gates (TLQ) implemented using double-gate (DG) MOSFETs. The proposed TLQ´s can be programmed dynamically via secondary (back) gate using the same bias conditions as the primary (front) gate. Moreover, they can realize universal threshold logic functions, which comprise Boolean operations as a subset.
Keywords :
Boolean functions; MOSFET; integrated circuit design; logic gates; threshold logic; Boolean operations; error tolerant threshold logic gates; nanoscale DG-MOSFET; threshold logic functions; CMOS logic circuits; CMOS technology; Field programmable gate arrays; Logic devices; Logic functions; Logic gates; Logic programming; MOSFETs; Programmable logic arrays; Reconfigurable logic;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378246
