Title :
Photoluminescent study of high indium content nanopyramid light emitting diodes
Author :
Shih-Pang Chang ; Jet-Rung Chang ; Kuok-Pan Sou ; Yun-Jing Li ; Yuh-Jen Cheng ; Hao-Chung Kuo ; Chun-Yen Chang
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
June 30 2013-July 4 2013
Abstract :
The radiative and non-radiative lifetime of high In content nanopyramid GaN LEDs are investigated by time resolved and temperature dependent photoluminescent measurement. The radiative recombination efficiency is much improved compared with the conventional c-plane LED.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; nanophotonics; nanostructured materials; photoluminescence; radiative lifetimes; time resolved spectra; wide band gap semiconductors; InGaN-GaN; high indium content nanopyramid GaN LED; high indium content nanopyramid light emitting diodes; nonradiative lifetime; radiative lifetime; radiative recombination efficiency; temperature dependent photoluminescent measurement; time resolved photoluminescent measurement; Excitons; Gallium nitride; Light emitting diodes; Quantum well devices; Radiative recombination; Substrates; Temperature measurement;
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location :
Kyoto
DOI :
10.1109/CLEOPR.2013.6600219
