Title :
Assessment of surge current capabilities of SiC-based high-power diodes through physics-based mixed-mode electro-thermal simulations
Author :
Cappelluti, Federica ; Bonani, Fabrizio ; Ghione, Giovanni
Author_Institution :
Dept. of Electron., Politec. di Torino, Torino, Italy
Abstract :
In this paper we apply such coupled methodology to the analysis of 4H-SiC based Schottky and JBS diodes, with the aim to assess the impact of device design and of thermal dynamics on the device ruggedness to current overloads.
Keywords :
Schottky diodes; semiconductor device models; silicon compounds; wide band gap semiconductors; JBS diodes; Schottky diodes; coupled methodology; device design; device ruggedness; high-power diodes; physics-based mixed-mode electro-thermal simulations; surge current capabilities; thermal dynamics; Current measurement; Electrical resistance measurement; Electronic packaging thermal management; Pulse circuits; Pulse measurements; Schottky diodes; Space vector pulse width modulation; Surges; Thermal resistance; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4244-6030-4
Electronic_ISBN :
978-1-4244-6031-1
DOI :
10.1109/ISDRS.2009.5378249
