Title :
Efficiency improvement of GaN light emitting diodes on Si by double island growth method
Author :
Hsueh-Hsing Liu ; Lung-Chieh Cheng ; Nien-Tze Yeh ; Chen-Zi Liao ; Jen-Inn Chyi
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
fDate :
June 30 2013-July 4 2013
Abstract :
This paper reports the double island growth method to reduce threading dislocation density in GaN epilayers grown on (111) silicon substrates by metal-organic vapor phase epitaxy. The overall dislocation density can be effectively reduced to 2.6×109 cm-2. The output power and wall-plug efficiency are enhanced by about 27 % and 34.5 % at an injection current of 20 mA for the light emitting diodes (LEDs) using the new double island structure.
Keywords :
III-V semiconductors; dislocation density; gallium compounds; island structure; light emitting diodes; optical fabrication; semiconductor epitaxial layers; vapour phase epitaxial growth; wide band gap semiconductors; (111) silicon substrates; GaN; LED; Si; current 20 mA; double island growth method; double island structure; epilayers; injection current; light emitting diodes; metal-organic vapor phase epitaxy; threading dislocation density; wall-plug efficiency; Gallium nitride; Light emitting diodes; Periodic structures; Power generation; Scanning electron microscopy; Silicon; Substrates;
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location :
Kyoto
DOI :
10.1109/CLEOPR.2013.6600221
