• DocumentCode
    3059238
  • Title

    Characterization of Boron Nitride thin films

  • Author

    Chubarov, M. ; Pedersen, H. ; Hogberg, H. ; Filippov, S. ; Engelbrecht, J.A.A. ; O´Connel, J. ; Henry, Amanda

  • Author_Institution
    Dept. of Phys., Chem. & Biol., Linkoping Univ., Linköping, Sweden
  • fYear
    2013
  • fDate
    June 30 2013-July 4 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Rhombohedral Boron Nitride layers were grown on sapphire substrate in a hot-wall CVD reactor. The characterization of those layers is reported and the results are discussed in correlation with the various growth parameters used.
  • Keywords
    CVD coatings; III-V semiconductors; Raman spectra; aluminium compounds; boron compounds; epitaxial growth; infrared spectra; semiconductor epitaxial layers; semiconductor growth; Al2O3; BN; growth parameter; hot wall CVD reactor; rhombohedral layers; Boron; Epitaxial growth; III-V semiconductor materials; Substrates; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
  • Conference_Location
    Kyoto
  • Type

    conf

  • DOI
    10.1109/CLEOPR.2013.6600222
  • Filename
    6600222
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3059238