Zero-bias Si backward diodes detectors incorporating P and B δ-doping layers grown by chemical vapor deposition

Author

Park, Si-Young ; Anisha, R. ; Jiang, Sheng ; Berger, Paul R. ; Loo, Roger ; Nguyen, Ngoc Duy ; Takeuchi, Shotaro ; Goossens, Jozefien ; Caymax, Matty

Author_Institution

Dept. of Electr. & Comput. Eng., Ohio State Univ., Columbus, OH, USA

fYear

2009

fDate

9-11 Dec. 2009

Firstpage

1

Lastpage

2

Abstract

For the first time, CVD-grown Si only backward diode detectors incorporating δ-doping planes were demonstrated. The best performance of curvature coefficient of 16 V^-1 with a junction resistance of 14 kΩ was shown. By the successful technology transfer from LT-MBE to CVD, the eventual placement of optimized CVD-grown detectors monolithically integrated with 300 mm CMOS platform to fabricate large area focal plane arrays with low cost is now possible.

Keywords

chemical vapour deposition; focal planes; molecular beam epitaxial growth; semiconductor diodes; semiconductor doping; silicon; CMOS platform; CVD; LT-MBE; backward diodes detectors; chemical vapor deposition; curvature coefficient; doping layers; large area focal plane arrays; resistance 14 kohm; zero-bias; Chemical vapor deposition; Educational institutions; Envelope detectors; Heterojunction bipolar transistors; Microwave devices; Millimeter wave technology; Semiconductor diodes; Silicon; Temperature sensors; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium, 2009. ISDRS '09. International

Conference_Location

College Park, MD

Print_ISBN

978-1-4244-6030-4

Electronic_ISBN

978-1-4244-6031-1

Type

conf

DOI

10.1109/ISDRS.2009.5378255

Filename

5378255