• DocumentCode
    3059311
  • Title

    Designing bulk-driven MOSFETs in scaled technologies

  • Author

    Urban, Christopher ; Moon, James E. ; Mukund, P.R.

  • Author_Institution
    Dept. of Electr. Eng., Rochester Inst. of Technol., Rochester, NY, USA
  • fYear
    2009
  • fDate
    9-11 Dec. 2009
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This paper has presented simulation results which show that delta doping is capable of significantly improving gmb (and thus, the intrinsic gain) in a BD MOSFET for channel lengths common to modern processes. Results also showed that the oxide thickness typically required for GD operation can be relaxed in a BD MOSFET; QM effects were then shown to degrade gmb less aggressively than gm.
  • Keywords
    MOSFET; semiconductor device models; bulk-driven MOSFET design; delta doping; scaled technologies; Circuit simulation; Degradation; Doping; Educational institutions; Low voltage; MOSFETs; Moon; Semiconductor process modeling; System-on-a-chip; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2009. ISDRS '09. International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4244-6030-4
  • Electronic_ISBN
    978-1-4244-6031-1
  • Type

    conf

  • DOI
    10.1109/ISDRS.2009.5378256
  • Filename
    5378256
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3059311