DocumentCode
3059408
Title
Investigations on pre-oxidation nitrogen implantation for the improvement of channel mobility in 4H-SiC MOSFETs
Author
Dhar, Sarit ; Ryu, Sei-Hyung ; Agarwal, Anant K.
fYear
2009
fDate
9-11 Dec. 2009
Firstpage
1
Lastpage
2
Abstract
In this context, a new process in which preoxidation N implants have been used in conjunction with NO post-oxidation annealing has been directly compared to the ´NO only´ case. The additional pre-oxidation N implants leads to an impressive improvement of the mobility but also decreases the threshold voltage. Interestingly, the NO+N process is significantly superior with respect to reduced border trapping, consistent with previous work on NO nitride oxides.
Keywords
MOSFET; annealing; ion implantation; nitrogen; oxidation; silicon compounds; wide band gap semiconductors; H-SiC; MOSFET; N; border trapping; channel mobility; post-oxidation annealing; preoxidation implantation; Annealing; Educational institutions; Electron mobility; Implants; MOSFETs; Nitrogen; Oxidation; Passivation; Silicon carbide; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2009. ISDRS '09. International
Conference_Location
College Park, MD
Print_ISBN
978-1-4244-6030-4
Electronic_ISBN
978-1-4244-6031-1
Type
conf
DOI
10.1109/ISDRS.2009.5378260
Filename
5378260
Link To Document